Abstract
Based on Monte Carlo simulation, we report the study of the inversion layer mobility in n-channel strained-Si/Si 1− x Ge x MOS structures. The influence of the strain in the Si layer and of the doping level is studied. Universal mobility curves μ eff as a function of the effective vertical field E eff are obtained for various state of strain, as well as a fall-off of the mobility in weak inversion regime, which reproduces correctly the experimental trends. We also observe a mobility enhancement up to 120% for strained-Si/Si 0.70Ge 0.30, in accordance with best experimental data. The effect of the strained-Si channel thickness is also investigated: when decreasing the thickness, a mobility degradation is observed under low effective field only. The role of the different scattering mechanisms involved in the strained-Si/Si 1− x Ge x MOS structures is explained. In addition, comparison with experimental results is discussed in terms of SiO 2/Si interface roughness, as well as surface roughness of the SiGe substrate on which strained-Si is grown.
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