Abstract
The effective electron mass parameter in Si-doped Al0.72Ga0.28N is determined to be m∗=(0.336±0.020) m0 from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and m∗=0.232 m0 for GaN, an average effective electron mass of m∗=0.376 m0 can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E1(TO) and one phonon mode behavior of the A1(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
