Abstract
We present a theoretical study of electron transport in silicon nanowire (SNW). A self-consistent 2D-Poisson-Schrödinger solver provides the band structure. Then, both electron velocity and low-field electron mobility along the SNW axis are computed with an ensemble Monte-Carlo method. Scattering mechanisms due to phonons (acoustic phonons, zero-order and first-order intervalley phonons) and surface roughness are taken into account. We investigate the effect of cross section size and transverse electric field on electron mobility in SNW.
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