Abstract
The electron drift mobility μd was measured in hydrogenated a-Si films prepared by rf and dc glow discharge in silane and by reactive sputtering in an Ar-H2 gas mixture. The electron transport in the glow-discharge material was found to be nondispersive. The highest observed room-temperature drift mobility, 0.8 cm2/V s, is a factor of 8 higher than previously reported. An electron drift mobility of 0.05 cm2/V s was observed in the sputtered material.
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