Abstract
The electron distribution function in GaAs where polar optical scattering dominates for low and high d.c. electric fields is calculated by several methods and approximate analytic expressions are displayed. For low electric fields the electron distribution function is found by three methods: iteration, perturbation, and analytic where the latter two are new. The perturbation series simplifies the analytic expressions for the electron distribution function but the analytic method gives the simplest forms. Comparisons of distribution functions for the three methods are given. The drift mobility is calculated. For high electric fields an expansion in inverse powers of the electric field is made of the Boltzmann equation and an electron distribution function calculated that is valid below the optical phonon energy. A comparison of this electron distribution function with the results of Stratton is made.
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