Abstract
The technique of electron diffraction has been used to investigate the optimal growing conditions for copper sulphide thin films. The authors have analysed the parameters which take part in the sulphurisation process. This analysis has allowed them to determine suitable conditions of thiourea concentration, solution temperature, dipping time and film thickness to obtain the different phases of copper sulphide. In particular, they give the best values of these parameters to obtain the chalcocite phase.
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