Abstract
Abstract : Measurements are reported on the rate constants and cross sections of electron attachment to SF6, c-C4F6, and C6F6 as a function of temperature in the range 300 to 600 K. Measurements are reported, also, of the rate constant for the temperature enhanced autodetachment from SF6(-), c-C4F6(-) and C6F6(-) in the same temperature range. New techniques are described for the accurate measurement of the effect of temperature on electron attachment and detachment processes and on the photodetachment of anions in dense fluids. Photodetachment measurements on SF6(-) and C6F6(-) are reported and discussed. Optically enhanced electron attachment has been observed in laser irradiated H2, SiH4 and CH4. The usefulness of these findings in understanding gas dielecrtic phenomena and plasma processes in gas-discharge-based technologies is discussed.
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