Electron cyclotron resonance-reactive ion etching of InGaAs/InAlAs/InP multilayer structure and GaN by cyclic injection of CH/sub 4//H/sub 2//Ar and O/sub 2/ with constant Ar flow

N Haneji,Y Nakano,T Ide,K Tada,M Sugiyama,Y Shimogaki,T Arakawa,Y Awa

doi:10.1109/imnc.2003.1268780

Electron cyclotron resonance-reactive ion etching of InGaAs/InAlAs/InP multilayer structure and GaN by cyclic injection of CH/sub 4//H/sub 2//Ar and O/sub 2/ with constant Ar flow

N Haneji, Y Nakano + Show 6 more

https://doi.org/10.1109/imnc.2003.1268780

Copy DOI

Publication Date: Oct 29, 2003

Affiliation: Yokohama National University, The University of Tokyo, Kanazawa Institute of Technology

#Electron Cyclotron Resonance-reactive Ion Etching #Constant Ar Flow + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

In this paper, we showed the combination of continuous etching and cyclic etching with/without constant Ar flow to each multilayer structure such as InGaAs/InAlAs/InP for optical devices such as lasers and optical modulators. We also applied cyclic etching with constant Ar flow to GaN, and obtained good surface morphology and etching characteristics.

Full Text