Abstract
Electron cyclotron resonance plasma etching is used to fabricate submicrometer-scale GaInAsSb/AlGaAsSb multiple-quantum-well structures. Smooth and anisotropic features at low substrate bias were obtained under appropriate conditions. The etch quality was investigated with photoluminescence spectroscopy; luminescence data from the etched features agree well with a model that assumes a low-damage etching process.
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