Abstract

ABSTRACTAmorphous silicon (a-Si:H) and amorphous carbon (a-C:H) films have been deposited by electron cyclotron resonance (ECR) microwave plasma enhanced CVD. A high deposition rate of ˜ 25 Å/sec and a light-to-dark conductivity ratio of 1 × 105 for a- Si:H films have been achieved by the ECR process using a pure silane plasma. ECR microwave plasmas have been analyzed by in situ optical emission spectroscopy (OES) and have shown a strong H * emission at 434 nm indicating higher chemical reactivity than RF plasmas. The linear correlation between the film deposition rate and the SiH* emission intensity of ECR silane plasma suggests that SiH* species are related to the neutral radicals which are responsible for the a-Si:H film deposition. Hard and soft a-C:H films have been deposited by ECR with and without RF bias power, respectively. The RF bias to the substrate is found to play a critical role in determining the film structure and the carbon bonding configuration of ECR deposited a-C:H films. Raman spectra of these films indicate that ECR deposition conditions can be optimized to produce diamond films.

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