Electron charge sensor with hole current operating at cryogenic temperature

Abstract

When silicon-on-insulator p-type MOSFET (SOI-PMOS) functions like a capacitor-less 1T-DRAM cell, it is possible for the number of electrons to be sensed at cryogenic temperatures (5 K). We developed a structure that combines silicon-on-insulator n-type MOSFETs (SOI-NMOS) and SOI-PMOS with multiple gates to form a silicon quantum-dot array. In this structure, a variable number of electrons is injected into the SOI-PMOS body by means of the bucket-brigade operation of SOI-NMOS connected in series. The channel-hole current was changed by the injected electrons due to the body bias effect in SOI-PMOS, and the change appeared to be step-like, which suggests a dependence on the elementary charge.