Electron channeling contrast imaging investigation of stacking fault pyramids in GaP on Si nucleation layers

Abstract

Abstract Thin gallium phosphide layers were deposited on (0 0 1) Silicon surfaces via organometallic vapor phase epitaxy and characterized by electron channeling contrast imaging (ECCI). Stacking fault pyramids at a density of up to 6 × 107 cm−2 were identified in the GaP nucleation layer by varying the diffraction conditions. We show that these defects originate at the GaP/Si interface and propagate on all four {1 1 1} planes. We observed that such stacking fault pyramids interact with the gliding of misfit dislocations during lattice-mismatched growth and enhance the threading dislocation density. The initial pulsing of TEGa and TBP during the nucleation of GaP on Silicon has been found to strongly influence the formation of those pyramidal defects. Changing the number of pulse cycles allowed us to lower their density by two orders of magnitude from 6 × 107 cm−2 to 4 × 105 cm−2.