Abstract
Electron capture induced by carrier heating in spherical quantum dot-quantum well (QD-QW) structure is studied theoretically. The capture rate (CR) in one- and two-polar- optical-phonon-mediated capture processes has been studied by taking into account the phonon confinement. We have derived the analytic expressions for carrier CRs which can be conveniently applied to practical calculations for the spherical quantum dot systems. The numerical results of the CR as function of dot radius, lattice temperature and electron density in GaAs/AlAs/vacuum and CdSe/ZnS/H2O QD systems are obtained and discussed.
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