Abstract
Irradiation damages caused by low energy electron beam (1 KeV) might occur on testing integrated circuit by Electron beam tester (EBEAM tester). Usually, this effects can be revealed on MOS device by a threshold voltage shift. We present a case study on a bilayer Si3N4/SiO2 passivated circuit 54HCUO4. We made experiment plans on passivated device, on passivation removed devices and on anti-charge-up layer covered devices. Significant threshold voltage shifts were only observed on circuits with passivation removed. These shifts depend on the total dose D and also on the dose rate : at low dose rate we don't observe shifts. Other experiments on oxyniture and an SiO2 passivation layer would confirm the link between irradiation damage, total dose, dose rate and the nature of the passivation.
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