Abstract
A low voltage electron beam technique is reported which when coupled with ac detection is capable of measuring periodic changes in contact potential as small as 1.0μV. This sensitivity, which exceeds by a factor greater than 100 the reported sensitivities obtained by other methods, should enhance the usefulness of the contact potential measurement for detailed surface studies, especially in the case of semiconductors. The potential of the technique is demonstrated in the context of high resolution photovoltage measurements in n-type CdS which may allow for a sensitive form of surface state or surface barrier spectroscopy.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
