Electron beam synthesis of silicon-carbon coatings in the forevacuum pressure range

Abstract

We describe our investigations of the synthesis of silicon-carbon coatings obtained by electron-beam evaporation of silicon carbide at forevacuum background gas pressure. The electron beam was generated by a forevacuum-pressure, plasma-cathode electron source operating at a gas pressure of 5–10 Pa. The effect of electron beam parameters on the morphology and tribology of the deposited coatings was explored, and the results are described here.