Abstract
Some characteristics of a technique for accelerated particle beam monitoring are presented. This technique for beam current and pulse duration measurement is based on the electron beam pumped semiconductor laser (EBP-laser) principle of operation. Experimental investigations of a 300- mu m GaAs primary probe were carried out. Accelerated electron beam pulses with current range 50-500 A, pulse duration 5 mu s, and energy 200 keV were registered. The system sensitivity in this current range was 5*10/sup -3/ V/A. >
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
