Abstract
Negative tone patterns were created by polymer-contamination writing in a transmission electron microscope. Typical line edge roughness of the polymer lines was found to be below 1nm. The patterns were transferred to bismuth films using an anisotropic ion etch, resulting in final bismuth line edge roughness less than 2nm. This low roughness was achieved by growing the bismuth film such that the same crystallographic planes were exposed to the etching flux of ions.
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More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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