Abstract
Development in patterning technique of metal–organic frameworks (MOFs) will facilitate their integration in microelectronics, but controlling the structure of MOFs at the nanoscale remains a major challenge. We demonstrate that an electron beam (e-beam) can be used to pattern a zinc-imidazolate MOF, ZIF-L, at unprecedented resolution in a direct-write lithographic approach, where the electron-irradiated MOF functions either as a positive- or negative-tone resist depending on the level of exposure and developing solvent used. Nanosheets with adjustable thickness and other nanostructures can be obtained using a low e-beam with a controlled penetration depth. In addition, electron irradiation in ZIF-L leads to spatially directed crystallization to a prototypical MOF ZIF-8 via ligand-vapor treatment. This versatile strategy opens the door to e-beam-based processing of MOF materials for various applications.
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