Abstract
Electron beam lithography has become the principal production method for fabricating integrated circuit masks and reticles for 1–1 projection printing and for direct step‐on‐wafer exposure. This has been the result of improved quality, lower cost, and high speed in writing patterns that are doubling in complexity every year. Direct writing of devices has generally been limited to customizing single levels on gate arrays at relatively large dimensions or fabricating small devices such as microwave transistors for high operating speed. The transition from optical techniques to x‐ray or direct electron beam writing for the bulk of integrated circuit production will depend upon the quality, speed, and cost of the various sytems. The limitations on the performance of the various single spot, shaped beam, and multiple beam systems in meeting these requirements will be considered.
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