Electron Beam‐Irradiated Au/h‐BN/Au Cross‐Point Memristors

Abstract

Applying 2D materials to build memristors is a promising strategy that has attracted great interest in the semiconductor field in recent years. Although the study of memristors based on chemical vapor deposition (CVD) with lattice defects has been well established, the applications and detailed knowledge of the ones using mechanical exfoliation with good lattice structures are still scarce. Herein, the resistive switching behavior of an array of 3 μm × 3 μm cross‐point Au/25.7 nm mechanically exfoliated h‐BN/Au memristors is investigated after a controllable electron beam doping process. An electron beam irradiation strategy is first proposed to treat h‐BN memristors with intact lattice structure. Devices with moderate electron beam irradiation, which is about 1500 or 2000 mC cm−2, show good resistive switching curves. The memristor device has a repeatable resistive switching behavior, an on/off ratio of 108, a set voltage as low as 5 V, and a retention higher than 1000 s. This strategy provides an alternative method to improve the performance of memristor. Mechanical exfoliated h‐BN preserves the lattice structure, which is an immediate advantage to fabricate memristor using it compared to that fabricated by CVD.