Abstract
Copper migration and surface expansion of irradiated areas are observed in amorphous germanium-based chalcogenide thin films when an electron beam is focused in pulsed or continuous operation on the surface of these thin films. Both phenomena can be explained using a simple model in which the population of D− centers is considered to increase upon electron irradiation. The increase in the D− center population is envisaged as due to the breaking of bonds by the electron radiation and by the constant presence of negative charge in irradiated regions. Changes in copper concentration of 20%–30% and surface expansions of 30%–40% of films thickness have been obtained.
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