Abstract
Abstract Nanoprobing of transistors and resistors is increasing in importance for both design debug and electrical fault isolation. It is thus necessary to understand the impact of scanning a resistor or transistor with an electron beam in order to draw valid conclusions from nanoprobe measurements. In this article, the authors show that exposing samples to electron beams with energies above 4 keV can change the value of diffusion resistors by as much as 30% and that changes can occur at even lower voltages in areas of the sample covered with less material. The article also sheds light on why the changes occur.
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