Abstract
The electron-beam-induced current (EBIC) in a chemical-vapour-deposited (CVD) SiO2 passivation layer on an MOS structure is measured by a non-penetrating electron beam of 1 keV. A control grid is set above the specimen. The EBIC is measured with voltages of the control grid and the buried electrode as parameters. The surface vacuum potential, which corresponds to the vacuum level in the energy-band diagram, is measured simultaneously by a hemispherical retarding field energy analyser. The surface voltage which contributes to the EBIC is greater than the surface vacuum potential by an amount equal to the work function in volts. The work function is determined by the condition for the EBIC to begin to flow and the corresponding surface vacuum potential. By assuming the effective electron mobility in the insulator, the authors have shown that the experimental results are in good agreement with theoretical curves of space-charge-limited current.
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