Abstract
ABSTRACTThe electron-beam-induced-current (EBIC) technique has been used to image dislocations and other defects at strained Si: Sil−xGex epitaxial interfaces and in overlying epitaxial layers grown by Limited Reaction Processing. Depending upon the bias conditions and test structure, one can distinguish between interface defects and those in overlying films. We have found that for a low density of misfit dislocations, a high quality (defect-free) overlying epitaxial layer can be grown, but for a high density of dislocations certain line defects propagate upwards in the overlying layers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
