Abstract
Electron irradiated GaAs Schottky diodes, with reactive and nonreactive metals deposited on chemically prepared surfaces, were studied. The I− V and C− V characteristics were measured as a function of the dose of low energy (20 keV) electrons. The observed shifts in the characteristics after irradiation are different for tellurium and silicon doped substrates. It is proposed that the combined effect of the energy deposited by the electron beam and the strong electric field in the surface layer during irradiation may promote short range electromigration of impurity atoms. The resulting accumulation of dopants in the interface may be responsible for the observed changes.
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