Electron-beam fabricated high-speed digital GaAs integrated circuits

Abstract

The fabrication and performance of high-speed GaAs logic circuits incorporating submicrometer gate length FET's fabricated by electron-beam lithography are discussed. The process technology required for realizing 0.5-µm gate length devices is detailed. High-speed results including a 10-GHz logic gate, 34-ps gate delay for a ring oscillator, and a 4-GHz flip-flop are described.