Abstract
Publisher Summary This chapter discusses electron beam etching in microminiaturization. Microelectronics require micro fabrication methods that match the size and space of the components and assemblies involved. Traditional methods cannot be reduced in size indefinitely although the sizes of the individual components are becoming very much smaller. The high specific power loading of an electron probe is still present for beam cross-sections below 1 micron but the total power is dissipated in such a small volume that the specimen cooling through conduction prevents local melting of the material. A well-known phenomenon in all electron microscopes and similar electron beam devices is the deposition of contamination wherever the electron beam strikes a surface. The deposit builds up apparently linearly with time and with the current density in the electron beam. Many of the applications of electron beam technology to fields, such as microelectronics, have not been made because of the lack of suitable electron optical equipment. Electronics has been highly developed and there are many sources of various types of circuitry available.
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