Abstract
We report the effects of medium-energy (3.5 keV) electron-beam irradiation of C60 films between 1 and 4 ML thick grown on Si(100) 2×1-H studied by high-resolution electron energy-loss spectroscopy. Electron irradiation leads primarily to molecular fragmentation. Initially, molecular fragments are discrete, and saturated with hydrogen, but continued irradiation leads to the formation of a disordered material with a graphitic local structure. Experiments performed on a single monolayer of C60 show that under irradiation, fragments can bond to the substrate via displacement or desorption of the hydrogen atoms bonded to the Si substrate.
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