Electron band structure and optical properties of InN and related alloys

Abstract

AbstractNew metric system called electron metric system having basic metric constant is introduced. The connection between the electron metric system and the external metric system is defined. The symmetry relationships of the multinary semiconductor compound alloys are defined according to the electron metric system. The basic metric constant is found on the basis of diatomic tetrahedral cell. The electron wave vector in the new system is found and the electron energy states are determined. It is shown correlation between them in the multinary crystal. LCAO electron band structures of Inx Al1–x N and of Inx Ga1–x N are presented. The phenomenon tunnel optical absorption is investigated in Inx Al1–x N, in Inx Ga1–x N, in InN containing oxygen and in non‐stoichiometric InN. It is found the optical absorption edges begin in energies 0.2–1.62 eV that are lower than the energy band gaps due to this phenomenon. Existence of excitons of the structure is shown in these semiconductors and it is found that the peaks of the PL spectra correspond to annihilation energies of these excitons that change in interval 0.5–1.01 eV. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)