Electron attachment rate constants of SOCl2 in Ar, N2, and CH4

Abstract

The electron attachment rate constants of SOCl2 in the buffer gases of Ar, N2, and CH4 (150 to 500 Torr) at various E/N (1–15 Td) were measured by a parallel-plate drift-tube electron-swarm technique. Electrons were produced by irradiating the cathode with KrF laser photons. For the SOCl2–Ar mixture, the electron attachment rate constant has a maximum value of 6.2×10−10 cm3/s at E/N=4 Td. For SOCl2 in N2, the electron attachment rate constant is 1.25×10−9 cm3/s at E/N=1.3 Td, and decreases with increasing E/N. For SOCl2 in CH4, the electron attachment rate constant is 4.8×10−9 cm3/s at E/N=1 Td, and decreases with increasing E/N. For every gas mixture studied, the electron attachment rate constant is independent of buffer gas pressure, indicating that the electron attachment to SOCl2 is due to a dissociative process. The electron attachment processes in the studied gas mixtures are discussed.