Abstract
We have investigated the temperature dependence of longitudinal resistivity of high mobility two dimensional (2D) electron systems in the strongly correlated regime (rs ∼ 4–5). The area of the samples was relatively small, typically 2 × 2 μm2. The resistivity followed an Efros–Shklovskii (ES)-type variable range hopping (VRH) behavior, ϱ (T) = ϱ0 exp (T0/T)p, with p = 0.5. We found that in this regime, the pre-factor ϱ0 increases by discrete steps of h/2e2 as the carrier concentration (n) is increased, starting from ϱ0 = h/e2 at the lowest values of n close to the localization. The jumps in ϱ0 were associated with an oscillation in the activation energy defined by T0. We have discussed the observation of such quantized, temperature-independent resistivity pre-factors in the framework of electron assisted VRH.
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