Electron and phonon dynamics in zincblende gallium nitride

Abstract

AbstractThis report presents new Monte Carlo simulation results revealing the ballistic stage of growth of the phonon number, electron velocity and energy upon the switching‐on electric field, the shape of electron and phonon stationary distributions in high electric fields, as well as electron cooling and phonon number relaxation rates after switching‐off the field in zincblende gallium nitride crystals.LO phonon band population inversion is feasible here up to the room temperature relative to the TO phonons, and below T < 80 K – relative to the LA‐phonon band provided that the phonon lifetimes satisfy the conditions of ≥ 2 ps (LO) and ≥ 2 ns (LA). Phonon decay scenarios with the stimulated emission of infrared‐range photons are discussed including phonon difference transitions. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)