Abstract
A nitrogen-doped diamond-like carbon (DLC) film deposited on n-type silicon is modified by applying an electric field in a vacuum between a tungsten tip and the DLC film surface using a scanning probe field emission current method. The resistance decreases and a Schottky barrier is formed between the modified DLC and the silicon surface, while micro-Raman measurements show a slight nano-crystalline graphitization. The electron beam induced current from the modified area is measured without any metal contact deposition. An infrared laser beam with a wavelength of 1400 nm is scanned across the backside of the silicon, and the induced current from the DLC modified area is measured. It is shown that both infrared laser and electron beam induced current measurements were possible for the modified DLC film on silicon structures.
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