Abstract
We present CW and time-resolved photoluminescence measurements on GaAs/AlGaAs asymmetric double quantum well heterostructures. Several samples (eight) have been considered in order to study the influence, on the carrier tunneling process, of both barrier thickness and energy separation between the levels in the different wells. A comparison between photoluminescence decay time of excitonic recombinations in the narrow well and wide well, under resonant and non resonant excitation, allows us to determine both the electron and hole tunneling times. Evidence of non resonant and LO phonon-assisted electron tunneling, resonant and near-resonant hole tunneling is found and discussed.
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