Abstract
Temperature variation of the piezoelectric photo-thermal (PPT) spectra of semi-insulating (SI) GaAs from 15 K to room temperature was measured. Curve fitting procedure was carried out for the experimental results in terms of a theoretical analysis based on rate equations for electrons in conduction band (CB) having regard to deep levels. We identified that the observed peaks were due to the nonradiative electron transitions into the deep electron trap levels. By changing the wavelength of an excitation light, new peaks were observed. Considering a photo-ionization cross section spectra for electrons and holes in GaAs, these peaks are considered due to hole traps.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.