Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon

Abstract

The conductivity mobility for majority carrier holes in compensated p-type silicon is determined by combined measurement of the resistivity and the net doping, the latter via electrochemical capacitance-voltage measurements. The minority electron mobility was also measured with a technique based on measurements of surface-limited effective carrier lifetimes. While both minority and majority carrier mobilities are found to be significantly reduced by compensation, the impact is greater on the minority electron mobility. The Hall factor, which relates the Hall mobility to the conductivity mobility, has also been determined using the Hall method combined with the capacitance-voltage measurements. Our results indicate a similar Hall factor in both compensated and noncompensated samples.