Electron- and Hole-Doping Effects on A-Site Ordered NdBaMn2O6

Abstract

We have investigated electron- and hole-doping effects on $A$-site ordered perovskite manganite NdBaMn$_2$O$_6$, which has the $A$-type (layered) antiferromagnetic (AFM) ground state. Electrons (holes) are introduced by partial substitution of Ba$^{2+}$ (Nd$^{3+}$) with Nd$^{3+}$ (Ba$^{2+}$). Electron-doping generates ferromagnetic (FM) clusters in the $A$-type AFM matrix. With increasing the electron-doping level, the volume fraction of the FM phase or the number of the FM clusters is abruptly increasing. In contrast, the $A$-type AFM phase is robust against the hole-doping, and no FM correlation is observed in the hole-doped NdBaMn$_2$O$_6$.