Abstract
The electron affinity of pentacene thin films has been evaluated during the last decades, but it is still under controversial due to varieties of film quality and radiation damages of the films introduced during inverse photoemission spectroscopy (IPES) experiment together with insufficient energy resolution of the instruments. We employed the near-ultraviolet IPES with a better energy resolution 0.27 ∼ 0.32 eV and using lower energy electron beams (0 eV ≤ Ei ≤ 4.9 eV) to study the unoccupied states of pentacene thin film. Due to a large mean-free-path of the electron in this energy region, the threshold electron affinity of the bulk of pentacene film was precisely determined to be 2.70 ± 0.03 eV. Using the threshold ionization energy of 4.90 ± 0.05 eV determined by ultraviolet photoemission spectroscopy, the band-gap energy of the pentacene film is obtained to be 2.20 ± 0.06 eV.
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