Abstract
We suggested a new mechanism for quantum control of a donor electron spin qubit state next to a Si/SiO2 interface. The theoretical calculation results show that the shuttling time versus the donor depth (or electric field strength) exhibits a double-valley feature. The origin of the double-valley feature is discussed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
