Abstract
An overview on the electron accumulation layer on InN thin film and nanowire surfaces is provided. The interactions between the valence and conduction bands due to the narrow band gap and high electron density at the surface of these materials have a big influence on the electronic structure and the device performance of these materials. We first review the current understanding on the electron accumulation on InN thin films, pointing out the role of defects and dislocations on the unintentional n-type conductivity. Then we carry out detailed investigation on tuning the surface charge properties of InN nanowires depending on the growth process.
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