Abstract
The mechanism of the electron accumulation in the AlGaSb/InAs/AlGaSb QW system with Al composition higher than 0.5 is discussed. In this QW system, it is found that the dominant electron source is donor levels in AlGaSb rather than interface levels which have, so far, been proposed as the electron source. We have found two contradictory results, that undoped AlGaSb shows p-type conduction and Be-doping is compensated electrically, are satisfactorily explained by the model of coexistence of donors and a larger concentration of deep acceptors. Electron accumulation in InAs QW is shown to be controllable by shifting the quantum level with respect to the deep acceptor level.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
