Abstract
We report on the electromotive force generation associated with electron cyclotron resonance (ECR) as well as impurity cyclotron resonance (ICR) in n-InGaAs. The observed voltage traces with variation in the magnetic field show similar structure to that of the absorption, and decrease rapidly with increasing temperature. An effect characteristic of the thin films is also observed. Comparing with results for the bulk samples and using thermomagnetic model we demonstrate the mechanism of voltage generation in films, and show the usefulness of this method to study the phonon transportation inside the sample and/or at interfaces between thin film and its substrate, and, what is more, to study resonant absorption.
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