Abstract

The electronic band structure of highly mismatched alloys (HMAs) was very successfully explored using electromodulation (EM) spectroscopy, i.e., photoreflectance (PR), electroreflectance, and contactless electroreflectance (CER). With these techniques, the optical transitions between the valence band and the E− and E+ bands, which are formed in the conduction band of dilute nitrides and dilute oxides, were observed and used to formulate the band anticrossing model, which well describes the electronic band structure of HMAs. In this tutorial, principles of EM spectroscopy are presented and shortly discussed. Special attention is focused on PR and CER techniques, which are nondestructive and have recently been widely applied to study the electronic band structure of HMAs and low dimensional heterostructures containing HMAs. For these methods, experimental setups are described, and theoretical approaches to analyze the experimental data are introduced. Finally, to show the utility of EM spectroscopy, selected examples of the application of this method to study various issues in HMAs are presented and briefly discussed.

Highlights

  • Alloying semiconductor compounds is a well recognized method to tailor properties of the materials

  • The idea of study the band alignment in quantum wells (QWs) with EM spectroscopy is based on the comparison of energies of optical transitions derived from EM measurements with those calculated for various band alignments

  • We described principles of EM spectroscopy together with many details of experimental setups for measurements of PR, ER, and contactless electroreflectance (CER) spectra and the analysis of EM spectra

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Summary

INTRODUCTION

Alloying semiconductor compounds is a well recognized method to tailor properties of the materials. It allows for an independent control of the valence and conduction band (CB) offsets greatly expanding potential range of applications of these alloys It emphasizes the need for a reliable experimental method to determine details of the electronic structure of HMAs. Electromodulation (EM) spectroscopy played a key role in the original discovery of the BAC interaction induced splitting of the conduction band of GaInNAs8 but it was used to reveal complex details of the electronic band structure of a large variety of HMAs.[8,11,12,14,15,17,18,19,22,23,28,29,38–73]. This tutorial should be of interest for students and researchers interested in EM spectroscopy itself

ELECTOMODULATION SPECTROSCOPY—PRINCIPLES
Mechanism of electromodulation
Line-shape analysis
Low-field limit—first-derivative spectroscopy
Low-field limit—third-derivative spectroscopy
Intermediate-field limit—Franz-Keldysh oscillations
Kramers–Kronig analysis in the low-field limit
Kramers–Kronig analysis vs fitting procedure
Fabry–Pérot oscillations
Experimental setups
Dark configuration
BULKLIKE MATERIALS
Dilute nitrides
Dilute oxides
The valence band structure
Excitonic transitions
Broadening of optical transitions
Carriers localization and temperature dependence of bandgap
QUANTUM WELLS AND HETEROSTRUCTURES
Band alignment
Built-in electric field
COMPLEMENTARINESS WITH OTHER OPTICAL METHODS
Energies of direct optical transitions—The broadening issue
Band alignment in quantum wells
Built-in electric field and the Fermi level position
SUMMARY AND OUTLOOK

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