Abstract
We perform an electroreflectance spectroscopy of Ge/Si self-assembled quantum dots in the near-infrared and in the mid-infrared spectral range. Up to three optical transitions are observed. The low-energy resonance is proposed to correspond to a band-to-continuum hole transition in the Ge valence band. The other two modulation signals are attributed to the spatially direct transitions between the electrons confined in the L and Δ(4) valleys of the Ge conduction band, and the localized hole states at the Γ point.
Highlights
In order to realize Si-based optoelectronics, Ge quantum dots (QDs) in Si matrices have attracted a large interest during the past years
Most work on the optical properties of Ge/Si QDs is based on the photoluminescence (PL) spectroscopy [1,2,3,4]
The optical transitions in layers of Ge/Si QDs are investigated by electroreflectance (ER) spectroscopy as a function of applied electric field
Summary
In order to realize Si-based optoelectronics, Ge quantum dots (QDs) in Si matrices have attracted a large interest during the past years. Detailed knowledge on the electronic band structure and related optical transitions is very important when using self-assembled Ge/Si QDs in Si-based photonic devices. The optical transitions in layers of Ge/Si QDs are investigated by electroreflectance (ER) spectroscopy as a function of applied electric field.
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