Abstract
The early stage of electromigration in Cu interconnects, before the visible structural damage is discussed in this chapter. It is shown, through the μSXRD technique that plastic deformation occurs on the early stage of electromigration. The behavior of the deformation depends on the interconnect width (the crystal grains are mainly rotating in the narrow lines, while crystal bending is observed in the wider lines). Moreover, in the case of wide interconnects, the direction of bending axis is very close to the direction of electrical current.
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