Abstract
This paper presents a study of the electric field induced migration of Ga and Sb ions during anodic oxidation of Al films on GaSb. Rutherford backscattering spectrometry was used to examine the composition and thickness of the anodic oxides. Oxide thickening was found to occur at the electrolyte oxide and also at the GaSb oxide substrate interface. It was found that Ga and Sb were mobile under the growth conditions and mobile ions resulted in the formation of a surface GaSb oxide. From measurments of the thickness we are able to report on the transport number for the anion and cations in this system. The growth of the surface GaSb oxide is discussed with reference to the intrinsic oxide growth rates in the Al and GaSb.
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