Abstract

In bulk and thin film metal samples, a net migration of material may take place when electrical current is passed through the sample at an elevated temperature. The migration is due to the passage of electron (or hole) current, the electrostatic force on the metal ions, and the temperature gradient in the sample. The extent and the direction of net migration has not been predicted satisfactorily by existing theories, leaving many unexplained anomalous experimental results. The present work is the development of a generalized theory that contains the main features of previous theories. It can explain all major experimental observations. Its main features include predictions on the temperature and time dependence of migration, its direction, its reversal temperature, and the approximate sample position that is affected most. The theory has been used to interpret available experimental data on a number of electron- and hole-type metals.

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