Abstract
1/f noise and high-resolution resistance measurements have been performed in isolated aluminum via interconnects under electromigration stress. The test structures had a volume of roughly 1 μm3 and a resistance of 0.1 Ω with an internal TiN diffusion barrier. The 1/f resistance noise of the vias was found to be larger than the 1/f noise in the connecting aluminum runners due to the high intrinsic noise, high resistivity TiN layer within the structure. The direct currents induced reversible increases and decreases in the resistance of the via due to electromigration damage but had no effect on the 1/f noise. The magnitude and polarity dependence of the dc current induced resistance changes are most consistent with the initial electromigration of copper. Above 200 °C the resistance changes became dominated by abrupt jumps in the resistance. Possible mechanisms for the abrupt resistance changes are reviewed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.