Electromigration in eutectic SnAg solder reaction couples with various ambient temperatures and current densities

Abstract

The electromigration behavior of eutectic SnAg solder reaction couples was studied at various temperature (25 and 120°C) when the current density was held constant at 10 4 A/cm 2 or 5 × 10 3 A/cm 2. Under the current density of 10 4 A/cm 2, scallop type Cu 6Sn 5 spalls and migrates towards the direction of electron flow at room ambient temperature (25°C), but transforms to layer type Cu 3Sn and leaves Kirkendall voids in it at high ambient temperature (120°C). Under the current density of 5 × 10 3 A/cm 2 plus room ambient temperature, no obvious directional migration of metal atoms/ions is found. Instead, the thermal stress induced by mismatch of dissimilar materials causes the formation of superficial valley at both interfaces. However, when the ambient temperature increases to 120°C, the mobility of metal atoms/ions is enhanced, and then the grains rotate due to the anisotropic property of β-Sn.